Aghahosseini, H.
(Hossein Aghahosseini)

MOPOS69 Wiggler Effects on the Growth Rate of a Raman Free-electron Laser with Axial Magnetic Field or Ion-Channel Guiding
Behrouz Maraghechi (IPM, Tehran; AUT, Tehran), Hossein Aghahosseini (AUT, Tehran), Amir Kordbacheh (AUT, Tehran; IPM, Tehran)

A relativistic theory for Raman backscattering in the beam frame of electrons is presented and is used to find the growth rate of a free-electron laser (FEL), in the Raman regime. A one dimensional helical wiggler and an axial magnetic field are considered. The effects of static self-electric and self-magnetic fields, induced by the steady-state charge density and currents of the non-neutral electron beam, are taken into account to find the steady-state trajectories. The wiggler effects on the linear dispersion relations of the space-charge wave and radiation are included in the analysis. A numerical computation is conducted to compare the growth rate of the excited waves with nonrelativistic treatment. It was found that self-field effects increase the growth rate in the group II orbits and decrease it in the group I orbits. However, the wiggler effects on growth rate are stronger and increase the growth rate on both group I and group II orbits. The discontinuity, due to the cyclotron resonance with the radiation, is removed by including the self-fields or wiggler effects.