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Kelley, M.J.

Paper Title Page
TUPPO042 RF Surface Impedance Measurement of Polycrystalline and Large Grain Nb Disk Sample at 7.5 GHz 305
 
  • B. Xiao, R.L. Geng, M.J. Kelley, F. Marhauser, H.L. Phillips, C.E. Reece, H. Wang
    JLAB, Newport News, Virginia
  • B. Xiao
    The College of William and Mary, Williamsburg
 
 

A Surface Impedance Characterization (SIC) system has been proposed at the 2005 SRF workshop and recently updated as detailed at the 2009 PAC conference. Currently the SIC system can measure samples in a temperature range from 2K to 20K exposed to an RF magnetic flux density of less than 3mT. We report on new results of a BCP etched large grain Nb sample measured with this system as compared with previous results of a BCP etched polycrystalline Nb sample. The design of an upgraded SIC system for use at higher magnetic flux densities is on the way to more efficiently investigate correlations between local material characteristics and associated SRF properties, both for preparation studies of bulk niobium and also new thin film SRF developments.

 

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Poster

 
TUPPO082 Development of SIMS Standards for Measurement of H, C, O, N in Nb 426
 
  • H. Tian, R. Myneni, C.E. Reece
    JLAB, Newport News, Virginia
  • D. Griffis, P. Maheswari, F.A. Stevie
    NCSU AIF, Raleigh, North Carolina
  • M.J. Kelley
    The College of William and Mary, Williamsburg
 
 

Performance of SRF cavities depends on material within the shallow RF penetration depth. C, N, and O are of particular interest as interstitial contaminants and earlier work suggested very high H concentration*. Secondary Ion Mass Spectrometry (SIMS) has the sensitivity to quantitatively measure these species in the region of interest. However, standards for quantitative SIMS analysis of these elements in Nb did not exist. Initial attempts to develop an ion implanted standard were unsuccessful because of the roughness of the Nb surface. In this study, Nb samples were specially chemical mechanical polished and then subsequently treated with a light BCP. The result is a surface finish suitable for SIMS analysis and implantation standards. Ion implants of C, N, O, and deuterium (D) were obtained in Nb (and simultaneously in Si for dose verification). D was implanted to characterize H, and to avoid the high H background. The results show that D is apparently very mobile in Nb, and another approach will be required to quantify this element. This multi-element standard has already been of great benefit in characterization of C, O, and N in polycrystalline and large grain Nb**.


* A. D. Batchelor, et al. Proc. Single Crystal Niobium Technology Workshop, Brazil, AIP Conf. Proc., Melville, NY (2007) 72-83.
** P. Maheshwari, et al. Surface and Interface Analysis (in press)

 

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Poster