Paper | Title | Other Keywords | Page |
---|---|---|---|
TUAL3 | Absolute Bunch Length Measurements at Fermi@ELETTRA FEL | electron, radiation, background, instrumentation | 312 |
|
|||
Electron bunch length measurements are of crucial importance for many types of accelerators, including storage rings, energy recovery linacs, free electron lasers. Many devices and instrumentation have been developed to measure and control the electron bunch length. A very powerful class of diagnostic tools is based on the coherent radiation power emitted by the electron bunch, that allows a non-destructive shot by shot measurement, well suitable for bunch length control feedback implementation. However they usually provide measurements of the bunch length relative variation, and external instrumentation like a transverse RF deflecting cavity is usually needed to calibrate them and to obtain absolute bunch length estimations. In this paper we present a novel experimental methodology to self-calibrate a device based on diffraction radiation from a ceramic gap. We indeed demonstrate the possibility to use coherent radiation based diagnostic to provide absolute measurements of the electron bunch length. We present the theoretical basis of the proposed approach and validate it through a detailed campaign of measurements that have been carried on in the FERMI@Elettra FEL linac. | |||
![]() |
Slides TUAL3 [1.126 MB] | ||
TUPC45 | DOSFET-L02: An Advanced Online Dosimetry System for RADFET Sensors | radiation, monitoring, controls, undulator | 481 |
|
|||
Funding: This work was supported in part by the Italian Ministry of University and Research under grants FIRB-RBAP045JF2 and FIRB-RBAP06AWK3. Radiation-sensing field-effect transistors (RADFETs) are integrating dosimeters that have found wide application in space and particle accelerator environments. We present a new system, the DOSFET-L02, for the readout of up to four RADFET sensors. The system features enhanced readout stability, support for long sensor cables, an adjustable exposure bias voltage of up to 30 V, and integrated temperature measurement. Recent measurements demonstrate the performance of the system with RADFETs at bias voltages of 9 V, 25 V, and under zero bias. |
|||