Author: Qian, C.
Paper Title Page
THO2AB01 ECRIS Developments Towards Intense High Brightness Highly-charged Ion Beams 363
 
  • L.T. Sun, X. Fang, Y.C. Feng, J.W. Guo, W. Lu, C. Qian, Y. Yang, W.H. Zhang, X.Z. Zhang, H.W. Zhao
    IMP, Lanzhou, People's Republic of China
 
  To meet the increasing needs of modern heavy ion accelerators, a ECR ion source must be developed to deliver high intensity high brightness high charge state ion beams, in terms of accelerator output power and beam transmission efficiency. With the success in several laboratories on fully superconducting ECR ion source development, the performance of highly charged heavy ion beams have been greatly enhanced. For instance, U33+ intensity had been doubled in 2011 by VENUS source at LBNL. This paper will present the development work at IMP towards a high performance ECR ion source. Recent high intensity bismuth results will be given, such as 710 eμA Bi30+ with SECRAL source. The first room temperature ECR ion source using evaporative cooling technique will also be reviewed. And the discussion of ECRIS extraction and transmission beam line on ion beam quality will also be presented in this paper.  
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