Author: Komiyama, M.
Paper Title Page
TUPP12 Design of Web-based Interface to RIKEN 28 GHz Super-conducting ECR Ion Source and the Future Plan 61
 
  • A. Uchiyama
    Sokendai, Ibaraki, Japan
  • K. Furukawa
    KEK, Ibaraki, Japan
  • Y. Higurashi, M. Komiyama, T. Nakagawa, K. Ozeki
    RIKEN Nishina Center, Wako, Japan
 
  A new RIKEN 28 GHz superconducting ECR ion source (28 GHz-ECRIS) was constructed in 2009 in order to increase the intensity of Uranium ion beam for RIKEN RI beam factory project(RIBF). For effective and stable operation of the 28 GHz-ECRIS, its client system should have an user-friendly man-machine interface. The ECRIS control system was constructed with the Experimental Physics and Industrial Control System (EPICS) as well as RIBF control system. As a result, it was successful to provide the useful clients, such as the operation GUI panels, the XY chart application, and the data acquisition system in EPICS-based system. On the other hand, to keep beam quality from 28 GHz-ECRIS for a long beam service term, it should be possible to operate the ECRIS by members of ion source team at any time. In order to relieve concern in the overseas business trip of members of ion source team, we designed a real-time web-based client system using WebSocket*, which is a new protocol presented by Internet Engineering Task Force (IETF). In this paper, we report the system and development status in detail.
* I. Fette and A. Melnikov. The WebSocket Protocol, IETF HyBi Working Group. 2011.
 
 
THXO03 Recent RIKEN 28 GHz SC-ECRIS Results 159
 
  • Y. Higurashi, M. Fujimaki, H. Haba, O. Kamigaito, M. Kidera, M. Komiyama, J. Ohnishi, K. Ozeki
    RIKEN Nishina Center, Wako, Japan
  • T. Aihara, M. Tamura, A. Uchiyama
    SHI Accelerator Service Ltd., Tokyo, Japan
 
  For increasing the beam intensity of highly charged heavy ions at RIKEN RIBF, we constructed new SC-ECR ion source. In the spring of 2011, we injected 28GHz microwave into the ion source and obtained first beam. Since then, we made several test experiments for increasing the beam intensity of highly charged Xe and U ion beam, and produced ~60 eμA of U35+, ~90 eμA of U33+ at the injected RF power of ~2 kW using sputtering method. In case of Xe25+, 250 euA was obtained at RF power of 1.7 kW. Using sputtering method, we produced U35+ ion beam longer than one month for the RIBF experiment without break. In the beginning of 2012, we installed additional GM-JT refrigerator to increase the cooling power at 4.2 K, then the total cooling power became higher than 9 W. Using it, we can use higher than 8 W of cooling power for heat load due to the absorbed X-rays. In this summer, we will install the new plasma chamber made of Al for increasing the cooling power. We will also use high temperature oven to increase the U vapor. In this contribution, we report the recent modification of the ion source and test experiments for production of U and Xe ion beam.  
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