RUPAC2012 - List of Authors (Trofimov, V.V.)

Paper	Title	Page
FRBOR03	Non-gated Field Emission Array as Low-Energy Electron Source: Experiment and Simulation	218
	K.A. Nikiforov, L.I. Antonova, N.V. Egorov, V.V. Trofimov St. Petersburg State University, St. Petersburg, Russia
	A non-gated NbN on Si wafer field emission arrays are studied. The I-V measurements and emission characteristics of edge-shaped cathodes in atmosphere low-voltage regime are considered. Mathematical and computer models are presented. The current density obtained from experiment was up to 384 Ampere per square centimeter in emission area 9 sq.mm. Low-voltage regime (20 V) for near (~ 1mkm) interelectrode distance in diode configuration is discussed.

Paper

Title

Page

Non-gated Field Emission Array as Low-Energy Electron Source: Experiment and Simulation

218

K.A. Nikiforov, L.I. Antonova, N.V. Egorov, V.V. Trofimov
St. Petersburg State University, St. Petersburg, Russia

A non-gated NbN on Si wafer field emission arrays are studied. The I-V measurements and emission characteristics of edge-shaped cathodes in atmosphere low-voltage regime are considered. Mathematical and computer models are presented. The current density obtained from experiment was up to 384 Ampere per square centimeter in emission area 9 sq.mm. Low-voltage regime (20 V) for near (~ 1mkm) interelectrode distance in diode configuration is discussed.