| Paper | Title | Page |
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TUPPB056 |
The Source of Metals Ions | |
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| The source of metals ions of sputtering type for ion accelerators was developed and investigated. In the design of ion source the idea of double compression of plasma and operation of two tandeming discharges - gas magnetron and Penning was realized. The source produces both the ions of magnetic and nonmagnetic metals. The results of experimental studies of the generation of Fe+, Fe++ and Zr+, Zr++ ions in pulsed and stationary state of operation of the source are presented. It is shown that the fraction of singly charged ions runs up to 30%, while the fraction of doubly ones runs up to - 15 -20% of the total ion current. The designed ion source can be used as an injector of high-current ion implanter or as a high-energy accelerator of heavy ions. | ||
TUPPB057 |
High-Intensive Non-Cesium Negative Hydrogen Ion Source for Ion Accelarators | |
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| This paper presents a non-cesium source of H− ions, developed at the Institute of Applied Physics, NAS of Ukraine. The source has an axially symmetric two-chamber design. For plasma generation an inverse gas magnetron is used. Formation of ions occurs in a volume of hydrogen plasma (without additives of cesium). In plasma volume of ion source the conditions for obtaining of increased density of H− ions in the field of adjoining to the emission aperture were realized. The source produces 60 mA of H− ions at an extraction voltage of 24 kV. The value of density of H− emission current ~ 600 mA/cm2 is obtained. It should be noted that the design of the ion source allows transforming it into a source of positive ions. This allows using this source in accelerator systems where both H− and H+ ions are accelerated. The H− source presented in this paper can be used as an injector for high energy accelerators, SNS and ADS accelerator complexes, as well as facilities for boron neutron capture therapy and fast neutron therapy. Earlier version of non-cesium source worked in the structure of RFQ accelerator for a long time. | ||