Paper |
Title |
Page |
FRBOR03 |
Non-gated Field Emission Array as Low-Energy Electron Source: Experiment and Simulation |
218 |
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- K.A. Nikiforov, L.I. Antonova, N.V. Egorov, V.V. Trofimov
St. Petersburg State University, St. Petersburg, Russia
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A non-gated NbN on Si wafer field emission arrays are studied. The I-V measurements and emission characteristics of edge-shaped cathodes in atmosphere low-voltage regime are considered. Mathematical and computer models are presented. The current density obtained from experiment was up to 384 Ampere per square centimeter in emission area 9 sq.mm. Low-voltage regime (20 V) for near (~ 1mkm) interelectrode distance in diode configuration is discussed.
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TUPPB043 |
Program Complex for Vacuum Nanoelectronics Finite Element Simulations |
409 |
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- K.A. Nikiforov, N.V. Egorov
St. Petersburg State University, St. Petersburg, Russia
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The program complex in MATLAB intended for vacuum nanoelectronics simulations is described. Physical and mathematical models, computational methods and algorithms of program complex are presented. Electrostatic simulation of electron transport processes is discussed under electron massless approximation; current function method and Matlab PDE Toolbox finite element solutions are used. Developed program complex is able to simulate diode and triode structures with complicated submicron geometry, current-voltage characteristics, calculate electric field distribution, estimate electric line interaction. The modelling results by the example of two different triode structures are presented. Matlab stand-alone application with graphical user interface for demonstration purposes is presented.
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