RUPAC2012 - List of Authors (Egorov, N.V.)

Paper	Title	Page
TUPPB048	The Multi-Tip Field Emission Cathode Mathematical Modeling	421
	N.V. Egorov, E.M. Vinogradova Saint-Petersburg State University, Saint-Petersburg, Russia
	The multi-tip field cathode as the field emission cathode arrays for rectangular lattice is considered. The field emission cathodes are of interest for vacuum nano-scale electronic devices. The electrostatic potential distribution is presented for the periodic system of free-number thin tips on a plane substrate as a field emission cathode and a plane substrate as an anode. The tips shape may be various. The potential of the substrate and cathode is equal the zero, the anode's potential is equal a constant. The effect of space charge is neglected. The each tip is represented as a system of the point charges. The point charges are determined to the zero equipotential coincides with the cathode's shape. The potential distribution is found for whole region of the field emission cathode arrays. The exact three-dimensional solution to the Laplace/Poisson equation has been obtained in the Cartesian coordinate system. This solution has direct applications in three-dimensional calculations of electron trajectories in micron- and submicron-sized field-emitter arrays.

FRBOR03	Non-gated Field Emission Array as Low-Energy Electron Source: Experiment and Simulation	218
	K.A. Nikiforov, L.I. Antonova, N.V. Egorov, V.V. Trofimov St. Petersburg State University, St. Petersburg, Russia
	A non-gated NbN on Si wafer field emission arrays are studied. The I-V measurements and emission characteristics of edge-shaped cathodes in atmosphere low-voltage regime are considered. Mathematical and computer models are presented. The current density obtained from experiment was up to 384 Ampere per square centimeter in emission area 9 sq.mm. Low-voltage regime (20 V) for near (~ 1mkm) interelectrode distance in diode configuration is discussed.

TUPPB043	Program Complex for Vacuum Nanoelectronics Finite Element Simulations	409
	K.A. Nikiforov, N.V. Egorov St. Petersburg State University, St. Petersburg, Russia
	The program complex in MATLAB intended for vacuum nanoelectronics simulations is described. Physical and mathematical models, computational methods and algorithms of program complex are presented. Electrostatic simulation of electron transport processes is discussed under electron massless approximation; current function method and Matlab PDE Toolbox finite element solutions are used. Developed program complex is able to simulate diode and triode structures with complicated submicron geometry, current-voltage characteristics, calculate electric field distribution, estimate electric line interaction. The modelling results by the example of two different triode structures are presented. Matlab stand-alone application with graphical user interface for demonstration purposes is presented.

Paper

Title

Page

The Multi-Tip Field Emission Cathode Mathematical Modeling

421

N.V. Egorov, E.M. Vinogradova
Saint-Petersburg State University, Saint-Petersburg, Russia

The multi-tip field cathode as the field emission cathode arrays for rectangular lattice is considered. The field emission cathodes are of interest for vacuum nano-scale electronic devices. The electrostatic potential distribution is presented for the periodic system of free-number thin tips on a plane substrate as a field emission cathode and a plane substrate as an anode. The tips shape may be various. The potential of the substrate and cathode is equal the zero, the anode's potential is equal a constant. The effect of space charge is neglected. The each tip is represented as a system of the point charges. The point charges are determined to the zero equipotential coincides with the cathode's shape. The potential distribution is found for whole region of the field emission cathode arrays. The exact three-dimensional solution to the Laplace/Poisson equation has been obtained in the Cartesian coordinate system. This solution has direct applications in three-dimensional calculations of electron trajectories in micron- and submicron-sized field-emitter arrays.

FRBOR03

Non-gated Field Emission Array as Low-Energy Electron Source: Experiment and Simulation

218

K.A. Nikiforov, L.I. Antonova, N.V. Egorov, V.V. Trofimov
St. Petersburg State University, St. Petersburg, Russia

A non-gated NbN on Si wafer field emission arrays are studied. The I-V measurements and emission characteristics of edge-shaped cathodes in atmosphere low-voltage regime are considered. Mathematical and computer models are presented. The current density obtained from experiment was up to 384 Ampere per square centimeter in emission area 9 sq.mm. Low-voltage regime (20 V) for near (~ 1mkm) interelectrode distance in diode configuration is discussed.

TUPPB043

Program Complex for Vacuum Nanoelectronics Finite Element Simulations

409

K.A. Nikiforov, N.V. Egorov
St. Petersburg State University, St. Petersburg, Russia

The program complex in MATLAB intended for vacuum nanoelectronics simulations is described. Physical and mathematical models, computational methods and algorithms of program complex are presented. Electrostatic simulation of electron transport processes is discussed under electron massless approximation; current function method and Matlab PDE Toolbox finite element solutions are used. Developed program complex is able to simulate diode and triode structures with complicated submicron geometry, current-voltage characteristics, calculate electric field distribution, estimate electric line interaction. The modelling results by the example of two different triode structures are presented. Matlab stand-alone application with graphical user interface for demonstration purposes is presented.