TECHNOLOGICAL LINE FOR PROTON IRRADIATION OF SEMICONDUCTOR STRUCTURES

V.S. Stolbunovª¹, V.N. Gubarev², A.M. Surma², D.Ju. Semenov³

¹Alikhanov Institute for Theoretical and Experimental Physics, Moscow, Russia

²Federal State Unitary Enterprise Research The Lenin's All-Russia Electrotechnical Institute, Moscow, Russia

³Proton-Electrotex JSC, Orel, Russia

Abstract

The technological line was created at the proton linear accelerator I-2 for irradiation of semiconductor structures with the 25 MeV proton beam aiming improvement of operation parameters for high power siliceous devices such as the following: thyristors, bipolar transistors, diodes and others. Details of the line construction and specialty of irradiation technology using are presented.

ª – corresponding author

No paper 

Contribution not received