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Lagutin, A.E.

Paper Title Page
THLO05

 Electrophysical Complexes On Basis Of The Electrostatic Accelerator ESA-2 for Fundamental And Applied Investigations 

  • A.E.Lagutin, E.B.Boyko, A.S.Kamyshan, F.F.Komarov
    IAPP, Belarus

Electrostatic accelerator ESA-2 is a multi-purpose tool for fundamental and applied research in nuclear and particle physics. Usage of ESA-2 in quality an implanter, and as a source of ions for conducting of investigations of solid-state materials by non-destructive control methods, such as, for example, the Rutherford backscattering (RBS) is discussed. Ion implantation usage for electrical isolation of microelectronic devices based on IV group (Si) and III-V (GaAs) semiconductors is described. In case of Si, substoichiometric nitrogen implantation is proposed as method for the creation of buried dielectric layers for device/substrate isolation. For III-V semiconductors, device/device isolation can be achieved by the formation of ion beam induced defect regions where radiation defects produce deep-level traps for carriers. Polyenergetic and high energy ion implantation is studied as the method for the formation of uniform defect distributions. The Rutherford backscattering spectrometer has been designed and assembled. It has a high resolution provided for usage an electrostatic energy analyzer. The energy range of detected ions is 40 to 300 keV. The energy resolution is better than 1.2 percent. Basing on experimental results it is shown that RBS spectrometer with electrostatic analyzer as a sensor can be successfully applied both for shallow depth impurities profiling and also for measurements such ion beam parameters, as energy and energy width. The present paper deals with the interaction of 380 keV H+ ions with Si surface at glancing angles corresponding to the quasi-channeling regime.

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