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@InProceedings{rathod:napac2019-mopls01,
author = {K.N. Rathod and K. Asokan and K.H. Chae and N.A. Shah and J.P. Singh and P.S. Solanki},
title = {{Spectroscopic Correlations to Resistive Switching of Ion Beam Irradiated Films}},
booktitle = {Proc. NAPAC'19},
pages = {160--162},
paper = {MOPLS01},
language = {english},
keywords = {radiation, ECR, experiment, scattering, laser},
venue = {Lansing, MI, USA},
series = {North American Particle Accelerator Conference},
number = {4},
publisher = {JACoW Publishing, Geneva, Switzerland},
month = {10},
year = {2019},
issn = {2673-7000},
isbn = {978-3-95450-223-3},
doi = {10.18429/JACoW-NAPAC2019-MOPLS01},
url = {http://jacow.org/napac2019/papers/mopls01.pdf},
note = {https://doi.org/10.18429/JACoW-NAPAC2019-MOPLS01},
abstract = {Researchers concentrated on resistive random access memories (RRAMs) due to excellent scalability, high integration density, quick switching, etc*,**. Intrinsic physical phenomenon of RRAMs is resistive switching. In this work, ion beam irradiation was used as a tool to modify resistive switching of pulsed laser deposited (PLD) Y0.95Ca0.05MnO3/Si films. Ion irradiation induced optimal resistive switching with spectroscopic correlations has been attributed to oxygen vacancy gradient. Resistive switching ratio is estimated to be increased for the film irradiated with fluence 1×10¹¹ ions/cm² due to irradiation induced strain and oxygen vacancies verified by X’ray diffraction (XRD), Raman, atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) and near-edge X-ray absorption fine structure (NEXAFS) measurements. Strain relaxation and oxygen vacancy annihilation have been realized for higher fluence (1×1012 and 1×1013 ions/cm²) owing to local annealing effect. Present study suggests that the films understudy can be considered as emerging candidates for RRAMs.},
}