Author: Pfeffer, H.
Paper Title Page
MOPOB39 A 600 Volt Multi-Stage, High Repetition Rate GaN FET Switch 152
 
  • G.W. Saewert, D. Frolov, H. Pfeffer
    Fermilab, Batavia, Illinois, USA
 
  Using recently available GaN FETs, a 600 Volt three-stage, multi-FET switch has been developed having 2 nanosecond rise time driving a 200 Ω load with the potential of approaching 30 MHz average switching rates. Possible applications include driving particle beam choppers kicking bunch-by-bunch and beam deflectors where the rise time needs to be custom tailored. This paper reports on the engineering issues addressed, the design approach taken and some performance results of this switch.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-NAPAC2016-MOPOB39  
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