MEDSI2018 - List of Authors (Appathurai, N.)

Paper	Title	Page
WEPH01	Evaluation of Anisotropic Simulations & Redesign of the BXDS High Energy Monochromator Bent Laue Diffraction Crystal Holders	199
	M.J.P. Adam, N. Appathurai CLS, Saskatoon, Saskatchewan, Canada
	The Brockhouse X-ray Diffraction and Scattering Sector (BXDS) High-Energy (HE) beamline includes a bent Laue diffraction monochromator. The BXDS HE monochromator achieves energy ranges of 35keV to 90 keV through the bent Laue diffraction of two silicon crystal wafers. Each wafer (460um & 1000um thick) is bent to achieve specific sagittal radius (Rs); subsequent anticlastic meridional radius (Rm) results from the anisotropic nature of silicon, creating the desired x-ray focusing parameters. During the initial conditioning of the BXDS HE monochromator spurious diffraction patterns were observed indicating that the crystal holder, and crystal integrity failed. Alternative holder designs were evaluated using Finite Element Analysis (FEA; ANSYS) simulations to ensure that appropriate Rs and Rm values were achieved, verification of the crystal holder Rs was completed using contact 3D measurement (FaroArm), and the crystal surface was assessed using 3D optical profiling (Zygo). A superior holder was chosen based on the results, and replaced. The performance of the BXDS HE monochromator has been characterized, indicating the new holder design has achieved x-ray focusing parameters.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-MEDSI2018-WEPH01
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Paper

Title

Page

Evaluation of Anisotropic Simulations & Redesign of the BXDS High Energy Monochromator Bent Laue Diffraction Crystal Holders

199

M.J.P. Adam, N. Appathurai
CLS, Saskatoon, Saskatchewan, Canada

The Brockhouse X-ray Diffraction and Scattering Sector (BXDS) High-Energy (HE) beamline includes a bent Laue diffraction monochromator. The BXDS HE monochromator achieves energy ranges of 35keV to 90 keV through the bent Laue diffraction of two silicon crystal wafers. Each wafer (460um & 1000um thick) is bent to achieve specific sagittal radius (Rs); subsequent anticlastic meridional radius (Rm) results from the anisotropic nature of silicon, creating the desired x-ray focusing parameters. During the initial conditioning of the BXDS HE monochromator spurious diffraction patterns were observed indicating that the crystal holder, and crystal integrity failed. Alternative holder designs were evaluated using Finite Element Analysis (FEA; ANSYS) simulations to ensure that appropriate Rs and Rm values were achieved, verification of the crystal holder Rs was completed using contact 3D measurement (FaroArm), and the crystal surface was assessed using 3D optical profiling (Zygo). A superior holder was chosen based on the results, and replaced. The performance of the BXDS HE monochromator has been characterized, indicating the new holder design has achieved x-ray focusing parameters.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-MEDSI2018-WEPH01

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)