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RIS citation export for TUPTS102: New Activation Techniques for Higher Charge Lifetime from GaAs Photocathodes

TY  - CONF
AU  - Rahman, O.H.
AU  - Biswas, J.P.
AU  - Gaowei, M.
AU  - Liu, W.
AU  - Wang, E.
ED  - Boland, Mark
ED  - Tanaka, Hitoshi
ED  - Button, David
ED  - Dowd, Rohan
ED  - Schaa, Volker RW
ED  - Tan, Eugene
TI  - New Activation Techniques for Higher Charge Lifetime from GaAs Photocathodes
J2  - Proc. of IPAC2019, Melbourne, Australia, 19-24 May 2019
CY  - Melbourne, Australia
T2  - International Particle Accelerator Conference
T3  - 10
LA  - english
AB  - GaAs is the choice of photocathode material for polarized electron sources. The well established method of activating GaAs for beam extraction is to use Cs and Oxygen to create a ’Negative Electron Affinity’(NEA) layer. However, this layer is highly sensitive to vacuum and gets damaged due to ion back bombardment in DC guns. In this work, we explore activation methods that used Tellurium in conjunction with the usual Cs and Oxygen. We report our method to activate GaAs and show charge lifetime results for our activation method. Our results show that the use of Te could potentially help with longer charge lifetimes from GaAs cathodes in DC guns.
PB  - JACoW Publishing
CP  - Geneva, Switzerland
SP  - 2157
EP  - 2159
KW  - cathode
KW  - electron
KW  - gun
KW  - laser
KW  - site
DA  - 2019/06
PY  - 2019
SN  - 978-3-95450-208-0
DO  - DOI: 10.18429/JACoW-IPAC2019-TUPTS102
UR  - http://jacow.org/ipac2019/papers/tupts102.pdf
ER  -