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RIS citation export for THPTS045: Preparation of Titanum-Zirconium-Vanadium Films by Quantitative Deposition

AU  - Shao, J.Q.
AU  - Chen, C.
AU  - Ge, X.Q.
AU  - Li, W.
AU  - Wang, S.
AU  - Wang, Y.
AU  - Wei, W.
AU  - Zhang, B.
AU  - Zhang, Y.X.
AU  - Zhu, B.L.
ED  - Boland, Mark
ED  - Tanaka, Hitoshi
ED  - Button, David
ED  - Dowd, Rohan
ED  - Schaa, Volker RW
ED  - Tan, Eugene
TI  - Preparation of Titanum-Zirconium-Vanadium Films by Quantitative Deposition
J2  - Proc. of IPAC2019, Melbourne, Australia, 19-24 May 2019
CY  - Melbourne, Australia
T2  - International Particle Accelerator Conference
T3  - 10
LA  - english
AB  - TiZrV has been used in vacuum technology and electric vacuum devices due to its high pumping speed and low activation temperature in recent years. At the same time, many preparation methods have been developed. Different from the current coating method of magnetron sputtering, this paper discusses the preparation of thin film coating from the viewpoint of vacuum sintering, which is flexible in design and more suitable for operation. Based on the analysis of the surface morphology of the sintered film, the feasibility and operability of the experimental method were explored from the surface compactness of the getter.
PB  - JACoW Publishing
CP  - Geneva, Switzerland
SP  - 4210
EP  - 4212
KW  - vacuum
KW  - experiment
KW  - electron
KW  - operation
DA  - 2019/06
PY  - 2019
SN  - 978-3-95450-208-0
DO  - DOI: 10.18429/JACoW-IPAC2019-THPTS045
UR  - http://jacow.org/ipac2019/papers/thpts045.pdf
ER  -