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RIS citation export for THPML129: Deposition and Characterization of TiZrHfV films by DC Magnetron Sputtering

TY - CONF
AU - Ge, X.Q.
AU - He, T.L.
AU - Pei, X.T.
AU - Wang, Y.
AU - Wang, Y.G.
AU - Wei, W.
AU - Zhang, B.
AU - Zhang, Y.X.
ED - Koscielniak, Shane
ED - Satogata, Todd
ED - Schaa, Volker RW
ED - Thomson, Jana
TI - Deposition and Characterization of TiZrHfV films by DC Magnetron Sputtering
J2 - Proc. of IPAC2018, Vancouver, BC, Canada, April 29-May 4, 2018
C1 - Vancouver, BC, Canada
T2 - International Particle Accelerator Conference
T3 - 9
LA - english
AB - The new generation of accelerators places higher demands on the surfaces of vacuum chamber materials. Search for low secondary electron yield (SEY) materials and an effective vacuum chamber surface treatment process, which can effectively reduce the electronic cloud effect, are important early works for the new generation of accelerators. In this work, we revealed the SEY characteristics of Ti-Zr-Hf-V NEG films and Ti-Zr-V NEG films which were deposited on Si (111) substrates using direct current magnetron sputtering method. The surface morphology and surface chemical bonding information were collected by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). With the same parameters, the maximum SEY of Ti-Zr-Hf-V NEG films and Ti-Zr-V NEG films are 1.24 and 1.51, respectively. These results are of great significance for the next-generation particle accelerators.
PB - JACoW Publishing
CP - Geneva, Switzerland
SP - 4983
EP - 4985
KW - vacuum
KW - electron
KW - controls
KW - storage-ring
KW - target
DA - 2018/06
PY - 2018
SN - 978-3-95450-184-7
DO - 10.18429/JACoW-IPAC2018-THPML129
UR - http://jacow.org/ipac2018/papers/thpml129.pdf
ER -