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TY - CONF AU - Vogel, M. AU - Jiang, X. AU - Schumacher, M. ED - Koscielniak, Shane ED - Satogata, Todd ED - Schaa, Volker RW ED - Thomson, Jana TI - GaN Thin Film Photocathodes for High Brightness Electron Beams J2 - Proc. of IPAC2018, Vancouver, BC, Canada, April 29-May 4, 2018 C1 - Vancouver, BC, Canada T2 - International Particle Accelerator Conference T3 - 9 LA - english AB - Gallium nitride (GaN) is one promising candidate as photocathode material showing high quantum efficiencies which is one of the requirements for high brightness electron beams. In addition to reported quantum efficiencies of up to 70%, GaN needs to satisfy the demands for long lifetime, low dark current and low thermal emittance. In this contribution, the ongoing activities of the synthesis by means of reactive rf magnetron sputtering and characterization of GaN is presented. The latter is done by standard materials science methods and in-situ measurements of the quantum efficiency in combination with lifetime and dark current measurements to asses and optimize the photocathode's performance. Along with the project's details, first experimental results of GaN thin films synthesized utilizing a GaAs source are presented. PB - JACoW Publishing CP - Geneva, Switzerland SP - 4594 EP - 4597 KW - cathode KW - electron KW - target KW - experiment KW - brightness DA - 2018/06 PY - 2018 SN - 978-3-95450-184-7 DO - 10.18429/JACoW-IPAC2018-THPMK118 UR - http://jacow.org/ipac2018/papers/thpmk118.pdf ER -