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TY - CONF AU - Takayanagi, T. AU - Horino, K. AU - Ueno, T. ED - Koscielniak, Shane ED - Satogata, Todd ED - Schaa, Volker RW ED - Thomson, Jana TI - Development of a New Modular Switch Using a Next-Generation Semiconductor J2 - Proc. of IPAC2018, Vancouver, BC, Canada, April 29-May 4, 2018 C1 - Vancouver, BC, Canada T2 - International Particle Accelerator Conference T3 - 9 LA - english AB - An ultra-high-speed short pulse switch for high power have been developed by using SIC - MOSFET which is one of next generation semiconductors. Semiconductor switches using SIC-MOSFETs are expected to replace the thyratron, and they are composed of circuits in which many semiconductor switches are multiplexed in series and parallel for high power. Semiconductor switches using SIC-MOSFETs are expected to replace the thyratron, and they are also designed by connecting many semiconductor switches in parallel-series. To realize a low switching noise, it is common to form a symmetrical circuit. However, as the number of parallel connections increases, the circuit length between input and output becomes longer, so the output waveform is distorted due to any timing jitter or level fluctuation. Therefore, we propose a radially symmetric type of a module switch which does not cause level fluctuation due to the timing jitter by equalizing the circuit length independently of the number of semiconductor switches. The design and preliminary test results of two types of switch circuits, radially symmetric type and line symmetric type are presented here. PB - JACoW Publishing CP - Geneva, Switzerland SP - 3841 EP - 3844 KW - power-supply KW - pulsed-power KW - ISOL KW - timing KW - kicker DA - 2018/06 PY - 2018 SN - 978-3-95450-184-7 DO - 10.18429/JACoW-IPAC2018-THPAL082 UR - http://jacow.org/ipac2018/papers/thpal082.pdf ER -