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RIS citation export for SUSPF049: Long Lifetime Spin-Polarized GaAs Photocathode Activated by Cs2Te

TY - CONF
AU - Bae, J.
AU - Bazarov, I.V.
AU - Cultrera, L.
AU - Digiacomo, P.
ED - Koscielniak, Shane
ED - Satogata, Todd
ED - Schaa, Volker RW
ED - Thomson, Jana
TI - Long Lifetime Spin-Polarized GaAs Photocathode Activated by Cs2Te
J2 - Proc. of IPAC2018, Vancouver, BC, Canada, April 29-May 4, 2018
C1 - Vancouver, BC, Canada
T2 - International Particle Accelerator Conference
T3 - 9
LA - english
AB - High intensity and highly spin-polarized electron source is of great interest to the next generation Electron Ion Colliders. GaAs prepared by the standard activation method, which is the most widely used spin-polarized photocathode, is notorious for its vacuum sensitivity and short operational lifetime. To improve the lifetime of GaAs photocathodes, we activated GaAs by Cs2Te, a material well known for its robustness. We confirmed the Cs2Te layer forms negative electron affinity on GaAs with a factor of 5 improvement in lifetime. Furthermore, the new activation method had no adverse effect on spin-polarization. Considering Cs2Te forms much thicker activation layer (~ 2 nm) compared to the standard activation layer (~ monolayer), our results trigger a paradigm shift on new activation methods with other robust materials that were avoided for their thickness.
PB - JACoW Publishing
CP - Geneva, Switzerland
SP - 1589
EP - 1592
DA - 2018/06
PY - 2018
SN - 978-3-95450-184-7
DO - 10.18429/JACoW-IPAC2018-TUPML025
UR - http://jacow.org/ipac2018/papers/tupml025.pdf
ER -