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RIS citation export for SUSPF028: 300 kV DC High Voltage Photogun with Inverted Insulator Geometry and CsK2sb Photocathode

TY - CONF
AU - Wang, Y.W.
AU - Adderley, P.A.
AU - Benesch, J. F.
AU - Bullard, D.B.
AU - Grames, J.M.
AU - Hannon, F.E.
AU - Hansknecht, J.
AU - Hernandez-Garcia, C.
AU - Kazimi, R.
AU - Krafft, G.A.
AU - Mamun, M.A.
AU - Palacios Serrano, G.G.
AU - Poelker, M.
AU - Suleiman, R.
AU - Tiefenback, M.G.
AU - Wijethunga, S.A.K.
AU - Zhang, S.
ED - Koscielniak, Shane
ED - Satogata, Todd
ED - Schaa, Volker RW
ED - Thomson, Jana
TI - 300 kV DC High Voltage Photogun with Inverted Insulator Geometry and CsK2sb Photocathode
J2 - Proc. of IPAC2018, Vancouver, BC, Canada, April 29-May 4, 2018
C1 - Vancouver, BC, Canada
T2 - International Particle Accelerator Conference
T3 - 9
LA - english
AB - A compact DC high voltage photogun with inverted-insulator geometry was designed, built and operated reliably at 300 kV bias voltage using alkali-antimonide photocathodes. This presentation describes key electrostatic design features of the photogun with accompanying emittance measurements obtained across the entire photocathode surface that speak to field non-uniformity within the cathode/anode gap. A summary of initial photocathode lifetime measurements at beam currents up to 4.5 mA is also presented.
PB - JACoW Publishing
CP - Geneva, Switzerland
SP - 4571
EP - 4574
DA - 2018/06
PY - 2018
SN - 978-3-95450-184-7
DO - 10.18429/JACoW-IPAC2018-THPMK110
UR - http://jacow.org/ipac2018/papers/thpmk110.pdf
ER -