Paper |
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TUPG71 |
Ionization Profile Monitor Simulations - Status and Future Plans |
520 |
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- M. Sapinski, P. Forck, T. Giacomini, R. Singh, S. Udrea, D.M. Vilsmeier
GSI, Darmstadt, Germany
- F. Belloni, J. Marroncle
CEA/IRFU, Gif-sur-Yvette, France
- B. Dehning, J.W. Storey
CERN, Geneva, Switzerland
- K. Satou
J-PARC, KEK & JAEA, Ibaraki-ken, Japan
- C.A. Thomas
ESS, Lund, Sweden
- R.M. Thurman-Keup
Fermilab, Batavia, Illinois, USA
- C.C. Wilcox, R.E. Williamson
STFC/RAL/ISIS, Chilton, Didcot, Oxon, United Kingdom
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Nonuniformities of the extraction fields, the velocity distribution of electrons from ionization processes and strong bunch fields are just a few of the effects affecting Ionization Profile Monitor measurements and operation. Careful analysis of these phenomena require specialized simulation programs. A handful of such codes has been written independently by various researchers over the recent years, showing an important demand for this type of study. In this paper we describe the available codes and discuss various approaches to Ionization Profile Monitor simulations. We propose benchmark conditions to compare these codes between themselves and we collect data from various devices to benchmark codes against the measurements. Finally we present a community effort with a goal to discuss the codes, exchange simulation results and to develop and maintain a new, common codebase.
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DOI • |
reference for this paper
※ DOI:10.18429/JACoW-IBIC2016-TUPG71
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WEPG69 |
Profile Measurement by the Ionization Profile Monitor with 0.2T Magnet System in J-PARC MR |
811 |
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- K. Satou, H. Kuboki, T. Toyama
J-PARC, KEK & JAEA, Ibaraki-ken, Japan
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A nondestructive Ionization Profile Monitor (IPM) is widely used to measure transversal profile. At J-PARC Main Ring (MR), three IPM systems have been used not only to measure emittances but also to correct injection miss matchings. To measure injection 3GeV beam profiles, the high external E field of +50kV/130mm at the maximum is used to guide ionized positive ions to a position sensitive detector; transversal kick force originating from space charge E field of circulating beam is a main error source which deteriorates profile. The strong B field is also used to compensate the kick force. To measure 30GeV bunched beam at the flat top on the fast extraction mode in good resolution, the strong B field of about 0.2T is needed. One set of magnet system, which consists of a C-type and two H-type magnets, were developed and installed in one IPM system. The IPM chamber was inserted between the 2 poles of the C-type magnet. To make the line integral of B field along the beam axis zero, the H-type magnets have the opposite field polarity to that of the C-type magnet and were installed on both sides of the C-type magnet. Details of the magnet system and its first trials will be presented.
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DOI • |
reference for this paper
※ DOI:10.18429/JACoW-IBIC2016-WEPG69
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