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RIS citation export for WEP2PT034: Beyond Uniform Ellipsoidal Laser Shaping for Beam Brightness Improvements at PITZ

AU - Qian, H.J.
AU - Good, J.D.
AU - Koschitzki, C.
AU - Krasilnikov, M.
AU - Stephan, F.
ED - Chin, Yong Ho
ED - Zhao, Zhentang
ED - Petit-Jean-Genaz, Christine
ED - Schaa, Volker RW
TI - Beyond Uniform Ellipsoidal Laser Shaping for Beam Brightness Improvements at PITZ
J2 - Proc. of FLS2018, Shanghai, China, 5-9 March 2018
C1 - Shanghai, China
T2 - ICFA Advanced Beam Dynamics Workshop
T3 - 60
LA - english
AB - In the last decades, photoinjector brightness has improved significantly, driven by the needs of free electron lasers and many other applications. One of the key elements is photocathode laser shaping for reducing emittance growth from nonlinear space charge forces. At the photoinjector test facility at DESY in Zeuthen (PITZ), a uniform flattop laser was used to achieve record low emittance for a bunch charge from 20 pC to 1 nC. Due to the ideal 3D space charge force linearization in ellipsoidal electron bunches, uniform ellipsoidal photocathode laser shaping were proposed to improve beam emittance up to 33% for 1 nC beam at PITZ. In this paper, we will show even further transverse emittance improvements in simulations for both flattop and ellipsoidal laser pulses with parabolic radial distribution, versus uniform distributions. The laser shaping effects on longitudinal phase space are also discussed.
PB - JACoW Publishing
CP - Geneva, Switzerland
SP - 146
EP - 149
KW - laser
KW - ion
KW - emittance
KW - flattop
KW - simulation
DA - 2018/06
PY - 2018
SN - 978-3-95450-206-6
DO - 10.18429/JACoW-FLS2018-WEP2PT034
UR - http://jacow.org/fls2018/papers/wep2pt034.pdf
ER -