A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   V   W   Y   Z    

Ye, K. R.

 
Paper Title Page
WG323 Shanghai DUV-FEL Progress  
 
  • Z. Zhao, Y. Cao, M. Chen, Z. M. Dai, H. X. Deng, Q. Gu, D. M. Li, D. G. Li, D. K. Liu, K. R. Ye, M. H. Zhao, X. F. Zhao, Q. G. Zhou
    SINAP, Shanghai
  • S. Y. Chen
    IHEP Beijing, Beijing
  • J. P. Dai
    IHEP, Beijing
  • H. He, Q. K. Jia
    USTC/NSRL, Hefei, Anhui
 
  Funding: Supported by the Major State Basic Research Development Programme of China under Grant No. 2002CB713600, the Chinese Academy of Sciences, and the National Natural Science Foundation of China.

The SDUV-FEL has been designed as an HGHG type high gain FEL facility to provide high power coherent radiation from 262 nm to 88 nm, which consists of a 300 MeV S-band Linac, seeding laser, six sections of 1.5 m radiator undulator, one 0.8 m modulator undulator and one dispersion section. Its first 100 MeV Linac section has been successfully commissioned with a ns grid gun injector in 2005. A photocathode injector will replace the existing gun and buncher of the 100 MeV Linac in this year. The magnetic bunch compressor has been completed and will be installed in this year. The first 1.5 m radiator undulator has been fabricated and measured, and other five sections of radiator undulator are being under manufacture. The laser system for photocathode has been installed and commissioned. The photocathode RF gun and the FEL required beam diagnostics are under manufacture. In this paper, we also present the design optimization on the SDUV-FEL facility.

 
slides icon Slides