• M. Goldstein, S.H. Lee, Y.A. Shroff, P.J. Silverman, D. Williams
  Intel, Santa Clara, California
• R. Pantell
  Stanford University, Stanford, Califormia
• H. Park, M.A. Piestrup
  Adelphi Technology, Inc., San Carlos, California

Funding: Intel Research

Semiconductor industry growth has largely been made possible by regular improvements in lithography. State of the art lithographic tools cost upwards of twenty five million dollars and use 0.93 numerical aperture projection optics with 193nm wavelengths to pattern features for 45 nm node development. Scaling beyond the 32 nm feature size node is expected to require extreme ultraviolet (EUV) wavelength light. EUV source requirements and equipment industry plasma source development efforts are reviewed. Exploratory research on a novel hybrid klystron and high gain harmonic generation FEL with oblique laser seeding will be disclosed. The opportunity and challenges for FELs to serve as a second generation (year 2011-2013) source technology in the semiconductor industry are presented.