Bittner, M".".
(Michal Bittner)

THCOS02 Interaction of Intense Ultrashort XUV Pulses with Different Solids – Results from the Tesla Test Facility FEL Phase I
Jacek Krzywinski, Marek Jurek, Dorota Klinger, Jerzy Pelka, Andrzej Wawro (IP PAS, Warsaw), Marcin Sikora (AGH University of Science and Technology, Krakow), Evgeny L. Saldin, Evgeny A. Schneidmiller, Barbara Steeg, Rolf Treusch, Mikhail V. Yurkov (DESY, Hamburg), Michal Bittner, Dagmar Chvostova, Libor Juha, Vit Letal, Vladimir Vorlicek (FZU, Prague), Andrzej Andrejczuk, Henryk Reniewicz (University of Bialystok, Bialystok), Ryszard Sobierajski (Warsaw University of Technology, Warsaw), Anna Kauch (Warsaw University, Warsaw)

Desorption, ablation, and plasma formation have been studied for a large variety of materials (insulators, semiconductors, and metals). Damaged surfaces have been investigated using light, electron, and atomic force microscopy. Short-wavelength ablation was very efficient and clean when proper irradiation conditions were chosen. The edges of craters were sharp, and the area around the craters was clean. A distinct difference in the behavior of conducting materials and insulators was observed. In the case of insulators the morphology of the irradiated surface and the crater depth hardly depended on the beam intensity. In contrast, the irradiated silicon surface becomes very rough when the intensity exceeds the damage threshold. At high intensities multiple charged ions were registered. Kinetic energy of the ions increases with charge state and reaches keV range for highly-charged ions. Again, a clear difference between insulators and conducting material was observed. High charge states and energetic ions were typical for conductors and semiconductors. Only single ions states and low energetic ions (~50 eV) were detected for insulators for all irradiation conditions.