ECRIS2016 - List of Authors (Higurashi, Y.)

Paper	Title	Page
MOBO04	Recent Developments of RIKEN 28 GHz SC-ECRIS	10
	Y. Higurashi, H. Haba, M. Kidera, T. Nakagawa, J. Ohnishi, K. Ozeki RIKEN Nishina Center, Wako, Japan
	In the past two years, we tried to improve the performance of the RIKEN 28GHz SC-ECRIS for production of intense U ion beam. Usually, we used the sputtering method to produce U ion beam. Last year, we produced ~200e μA of U³⁵⁺ at the injected RF power of ~2.6kW, when slightly adding the U vapor with high temperature oven. For RIKEN RIBF experiment, we produced ~110 e μA of U³⁵⁺ beam with sputtering method longer than one month without break. In this case, we surly need very stable beam to increase the transmission efficiency in the accelerators and avoid the any damage of the components of the accelerator due to the high power beam. In this contribution, we will report the beam intensity of highly charged U ions as a function of various parameters (magnetic field strength, RF power, sputtering voltage etc.) and the effect of these parameters on the beam stability in detail. We also present the experience of the long term operation of the ion source for the RIKEN RIBF experiments.
	Slides MOBO04 [3.427 MB]
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-ECRIS2016-MOBO04
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Paper

Title

Page

Recent Developments of RIKEN 28 GHz SC-ECRIS

10

Y. Higurashi, H. Haba, M. Kidera, T. Nakagawa, J. Ohnishi, K. Ozeki
RIKEN Nishina Center, Wako, Japan

In the past two years, we tried to improve the performance of the RIKEN 28GHz SC-ECRIS for production of intense U ion beam. Usually, we used the sputtering method to produce U ion beam. Last year, we produced ~200e μA of U³⁵⁺ at the injected RF power of ~2.6kW, when slightly adding the U vapor with high temperature oven. For RIKEN RIBF experiment, we produced ~110 e μA of U³⁵⁺ beam with sputtering method longer than one month without break. In this case, we surly need very stable beam to increase the transmission efficiency in the accelerators and avoid the any damage of the components of the accelerator due to the high power beam. In this contribution, we will report the beam intensity of highly charged U ions as a function of various parameters (magnetic field strength, RF power, sputtering voltage etc.) and the effect of these parameters on the beam stability in detail. We also present the experience of the long term operation of the ion source for the RIKEN RIBF experiments.

Slides MOBO04 [3.427 MB]

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-ECRIS2016-MOBO04

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)