Author: Irfan, I.
Paper Title Page
TUP082 Materials Analysis of CED Nb Films Being Coated on Bulk Nb Single Cell SRF Cavities 638
 
  • X. Zhao, C.E. Reece
    JLab, Newport News, Virginia, USA
  • G. Ciovati
    Jefferson Lab, Newport News, Virginia, USA
  • I. Irfan, C. James, M. Krishnan
    AASC, San Leandro, California, USA
  • A.D. Palczewski
    JLAB, Newport News, Virginia, USA
 
  Funding: This research is supported at AASC by DOE via Grant No. DE-FG02-08ER85162 and Grant No. DE-SC0004994 and by Jefferson Science Associates, LLC under U.S. DOE Contract No. DEAC05- 06OR23177
This study is an on-going research on depositing a Nb film on the internal wall of bulk Nb single cell SRF cavities, via an coaxial energetic condensation (CED) facility at AASC company. The motivation is to firstly create a homoepitaxy-like Nb/Nb film in a scale of a ~1.5GHz RF single cell cavity. Next, through SRF measurement and materials analysis, it might reveal the baseline properties of the CED-type homoepitaxy Nb films. Such knowledge of Nb-Nb homo-epitaxy is useful to create future realistic SRF cavity film coatings, such as hetero-epitaxy Nb/Cu Films, or template-layer-mitigated Nb films. One large-grain, and three fine grain bulk Nb cavity were coated. They went through cryogenic RF measurement. Preliminary results show that the Q0 of a Nb film at 2 K and low rf field, produced by CED, could be close to that of the pre-coated bulk Nb surface (being CBP'ed plus a light EP); but the quality drops rapidly for increasing rf field. We are investigating if the severe Q0-slope is caused by hydrogen incorporation before deposition, or is determined by some structural defects during Nb film growth.
 
 
WEIOA02 Energetic Condensation Growth of Niobium Films 761
 
  • M. Krishnan, I. Irfan
    AASC, San Leandro, California, USA
 
  Funding: The AASC research is supported by the US Department of Energy via several SBIR research grants
Energetic Condensation refers to thinfilm growth on a surface using ~100eV ions, versus lower energy deposition using sputtering (~1-10eV with no substrate bias) or still lower energy thermal evaporation. The relatively high incident energy of energetic condensation creates defects and vacancies within the first few atomic layers and enables diffusion to lower free-energy sites in the lattice. Shallow defects migrate to the heated surface and are annihilated, leading to low-defect crystal growth. It has been shown [1] that the purer the film, the closer are its superconducting parameters to those of the bulk metal. Use of cathodic arc plasmas was proposed in 2000 by Langner [TESLA Rep. 2000-15, Ed. D. Proch, DESY 2000], followed by detailed development of the process [2]. AASC picked up from the European Community-Research Infrastructure Activity and has demonstrated very high RRR=541 in Nb films grown on crystal substrates [3]. Ongoing work to coat 1.3GHz copper cavities using cathodic arc plasmas, as well as growth of higher temperature films such as NbTiN, Nb3Sn and MgB2 are described. A related technique for energetic condensation using an ECR plasma source is also described.
1. C. Benvenuti et al, IEEE Trans. Appl. Supercond. 9 (1999) 900
2. R. Russo et al, Supercond. Sci. Technol. 18 (2005) L41-L44
3. M. Krishnan et al, Supercond. Sci. Technol. 24, 115002 (2011)
 
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