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- F. Weiss, C. Jimenez, S. Pignard
Institut Polytechnique de Grenoble, Grenoble INP, Grenoble, France
- C.Z. Antoine
CEA/IRFU, Gif-sur-Yvette, France
- M. Benz, E. Blanquet, R. Boichot, A. Mantoux, F. Mercier
Laboratoire SIMAP, Grenoble-INP, CNRS, UJF, Saint Martin d'Hères, France
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Issued from the recent development of thin films technologies, multilayer nanostructures face today very challenging questions in materials science: ultimate size reduction, process control at an atomic scale, new size driven properties and system characterisation. For superconducting RF technologies a significant breakthrough could arise from the use of multilayered structures deposited inside Nb cavities. These multilayer nanostructures are based on the use of some 10 nanometers thick superconducting layers (d<λL) with a higher Tc than in Nb, alternating with insulating layers, required to decouple the superconducting films. We present here our first studies devoted to nano-layered superconductors produced by Chemical Deposition techniques: CVD and ALD. The basic principles of CVD and ALD will be presented together with new developments of the coordination chemistry for the ALD precursors, which is key point for the optimization of the individual layers. First results concerning NbN films obtained by CVD as well as CVD and ALD results concerning insulating materials used for Superconducting/insulating (S/I/S/I) multilayers structures will be reported.
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