• D. Yu, P. Chen, M. Lundquist
  DULY Research Inc., Rancho Palos Verdes, California

Marx modulators, operated by the solid-state switches of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) or Insulated Gate Bipolar Transistors (IGBTs), offer an alternative to conventional high voltage modulators for rf power sources. They have the advantages of compact size, high-energy efficiency, high reliability, pulse width control and cost reduction. However, Marx modulators need a complex voltage compensation circuit if they are employed in long pulse applications such as the ILC project. We describe novel schemes to compensate the voltage droop of the Marx modulator and minimize the flattop fluctuation of the voltage pulse output through the utilization of inductances and the fast switching properties of solid-state switches. The feasibility of the schemes has been analyzed and relevant data will be presented.