• G. Agarwal, R. Dhunna, I.P. Jain, V.K. Kulshrestha
  UOR, Jaipur
• D. Kabiraj
  IUAC, New Delhi

Swift Heavy Ion (SHI) induced modification at Metal/Si interfaces has emerged as an interesting field of research due to its large applications. In the present study we investigate SHI induced mixed molybdenum silicide film with ion fluences. The Molybdenum and Si thin thin films were deposited on Silicon substrates using e-beam evaporation at 10^-8 torr vacuum. Thin films were irradiated with Au ions of energy 120 MeV to form molybdenum silicide. The samples were characterized by grazing incidence X-ray diffraction (GIXRD) technique for the identification of phase formation at the interface. Rutherford backscattering spectrometry (RBS) was used to investigate the elemental distribution in the films. The mixing rate calculations were made and the diffusivity values obtained leads to a transient melt phase formation at the interface according to thermal spike model.