Author: von Jagwitz, H.
Paper Title Page
TUPS080 Low Energy Bunching with a Double Gap RF Buncher 1725
 
  • H. von Jagwitz, U. Hagen, O. Heid, S. Setzer
    Siemens AG, Erlangen, Germany
 
  A com­pact dou­ble gap bunch­ing sys­tem for low en­er­gy pro­ton beams is pre­sent­ed. The sys­tem is de­signed for the bunch­ing of a low cur­rent pro­ton beam (less than 50μA) with an en­er­gy of 10 keV. The bunch­er op­er­ates at 150 MHz and bunch­es with­out sig­nif­i­cant­ly chang­ing the beam en­er­gy. The beam is gen­er­at­ed by an Elec­tron Beam Ion Source and has to be bunched for the sub­se­quent ac­cel­er­a­tion in a 150 MHz lin­ear ac­cel­er­a­tor. The bunch­er con­tains two short gaps and an RF elec­trode in­be­tween. Thus the full length of the bunch­er in the beam­line is in the range of 2 cm. The lo­ca­tion of the bunch focus de­pends on the bunch­er power. The bunched beam was anal­ysed at a dis­tance of 550 mm with a fast fara­day cup. The bunch­ing ef­fec­tiv­i­ty was de­ter­mined as 50%, which means that 50% of the pro­tons of the beam were lo­cat­ed in bunch­es with a width of 60°, which is a rea­son­able value of ac­cep­tance for a con­ven­tion­al ac­cel­er­a­tor cav­i­ty. Some the­o­ry and de­tailed re­sults will be pre­sent­ed.  
 
TUPS077 Shaping of Ion Pulses from an Electron Beam Ion Source for Particle Injection into Accelerators 1716
 
  • F. Ullmann, A. Schwan
    DREEBIT GmbH, Dresden, Germany
  • U. Hagen, O. Heid, H. von Jagwitz
    Siemens AG, Healthcare Technology and Concepts, Erlangen, Germany
  • G. Zschornack
    Technische Universität Dresden, Institut für Angewandte Physik, Dresden, Germany
 
  Elec­tron Beam Ion Sources (EBISs) pro­vide high­ly charged ions for many ap­pli­ca­tions, amongst oth­ers for par­ti­cle in­jec­tion into ac­cel­er­a­tors. Al­though EBISs are lim­it­ed in ion out­put they fea­ture a lot of ad­van­tages which qual­i­fy them for ac­cel­er­a­tor in­jec­tion. The ion puls­es ex­tract­ed from the ion sources can be di­rect­ly in­ject­ed into an ac­cel­er­a­tor se­quence which how­ev­er re­quires ion puls­es with dis­tinct shape and length. We pre­sent the pro­duc­tion of ion puls­es match­ing the re­quire­ments of par­ti­cle in­jec­tion. The ions are pro­duced by trap­ping in a high den­si­ty elec­tron beam for a cer­tain time with elec­tro­stat­ic po­ten­tials pro­vid­ing for their axial trap­ping. The ions are ex­tract­ed by low­er­ing the trap­ping po­ten­tial, i.e. open­ing the trap. Due to the ion en­er­gy dis­tri­bu­tion with­in the trap­ping re­gion ion ex­trac­tion can be con­trolled by con­trol­ling the trap­ping po­ten­tial. A spe­cif­ic time de­pen­dent con­trol mode of the trap­ping po­ten­tial thus al­lows to pro­duce ion puls­es with des­ig­nat­ed shape and length. Source pa­ram­e­ters such as work­ing gas pres­sure, elec­tron beam cur­rent and en­er­gy are in­flu­enc­ing the en­er­gy dis­tri­bu­tion of the ions which in turn is in­flu­enc­ing pulse shap­ing.