Author: Taniuchi, T.
Paper Title Page
MOPC015 S-band Vacuum Isolator and Circulator for Injector System of SPring-8 Linac 95
 
  • T. Taniuchi, H. Hanaki, S. Suzuki
    JASRI/SPring-8, Hyogo-ken, Japan
  • A. Miura, K. Shinohara, S. Tsuruoka
    Nihon Koshuha Co. Ltd, Yokohama, Japan
  
  A pres­sur­ized sul­fur hex­aflu­o­ride (SF6) waveg­uide sys­tem at an in­jec­tor sec­tion of SPring-8 linac, will be re­placed with a vac­u­um waveg­uide sys­tem in order to renew aged equip­ments and im­prove a phase sta­bil­i­ty. For this re­new­al, RF iso­la­tor and a cir­cu­la­tor op­er­at­ed in vac­u­um, are newly de­vel­oped. High power RF test for these com­po­nents were per­formed and a good re­sult for RF and vac­u­um char­ac­ter­is­tics were ob­tained.  
 
THPC088 Performance of RF System for XFEL/SPring-8 Injector 3101
 
  • T. Asaka
    RIKEN SPring-8 Center, Sayo-cho, Sayo-gun, Hyogo, Japan
  • T. Asaka, H. Ego, H. Hanaki, T. Kobayashi, S. Suzuki, T. Taniuchi
    JASRI/SPring-8, Hyogo-ken, Japan
  • T. Inagaki
    RIKEN/SPring-8, Hyogo, Japan
  • Y. Otake, T. Shintake, K. Togawa
    RIKEN Spring-8 Harima, Hyogo, Japan
  
  In the XFEL/SPring-8 ac­cel­er­a­tor, the RF pro­cess­ing of an in­jec­tor for the 8-GeV ac­cel­er­a­tor were car­ried out dur­ing two months after the in­stal­la­tion of all the main com­po­nents of the ac­cel­er­a­tor was com­plet­ed in Jan­uary 2011. To re­al­ize sta­ble bunch com­pres­sion pro­cess with­out the emit­tance growth, the in­jec­tor adopts the com­bi­na­tion of an ex­treme­ly low emit­tance thermion­ic gun and mul­ti-stage RF cav­i­ties for ve­loc­i­ty bunch­ing. In ad­di­tion, in order to re­duce the emit­tance growth oc­cur­ring at the tran­si­tion from the ve­loc­i­ty bunch­ing to ac­cel­er­a­tion, the newly de­vel­oped L-band APS type ac­cel­er­at­ing struc­tures and a waveg­uide sys­tem were in­tro­duced in the in­jec­tor. Since an in­ten­si­ty of beam cur­rent is af­fect­ed by the slight vari­a­tions of RF power and phase of these RF equip­ment, we have car­ried out thor­ough coun­ter­mea­sures to com­plete high­ly-sta­bi­lized RF sys­tems. Con­se­quent­ly, the sta­bil­i­ty of RF power and phase in rated op­er­at­ing con­di­tion of each RF cav­i­ty achieved 20 ppm (std.) and 0.06˚ (std.), re­spec­tive­ly. In this paper, we de­scribe the sta­bil­i­ty per­for­mances and RF pro­cess­ing of these RF sys­tems in the in­jec­tor.