IPAC2011 - List of Authors (Baumgartner, R.)

Paper	Title	Page
MOPC129	Compact Solid State RF-Modules for Direct Drive RF-linacs	382
	R. Irsigler, M. Back, R. Baumgartner, O. Heid, T.J.S. Hughes, M. Kaspar, T. Kluge, J. Sirtl, K. Weidner, M. Zerb Siemens AG, München, Germany
	We present a modular RF power source concept based on solid state RF-modules with novel SiC transistors. The concept offers lower cost, better reliability and reduced maintenance compared to traditional RF-source technology. No circulators are required, which makes the RF-module very compact and reliable. The SiC power transistor has a very low input capacitance and was optimized for low gate resistance to enable fast switching in the VHF range. It delivers a maximum pulsed drain saturation current of 65 A. The transistor provides at 350 V supply voltage and 150 MHz an output power of 5,6 kW at a gain of 15,8 dB. It is essential to avoid high parasitic source inductances at RF and good thermal conductivity is required for operation at high duty cycle. We have built very compact 75 x 90 mm ceramic amplifier modules using a planar interconnect technology (SIPLIT) to connect the bare die transistors to the DCB substrate. The modules have a fully symmetric push-pull topology (circlotron) with four transistors in parallel in each leg. The RF-modules delivered at 150 MHz an impressive RF output power in the range of 40 kW. Further tests at 324 MHz are planned and will be presented.

Paper

Title

Page

Compact Solid State RF-Modules for Direct Drive RF-linacs

382

R. Irsigler, M. Back, R. Baumgartner, O. Heid, T.J.S. Hughes, M. Kaspar, T. Kluge, J. Sirtl, K. Weidner, M. Zerb
Siemens AG, München, Germany

We present a modular RF power source concept based on solid state RF-modules with novel SiC transistors. The concept offers lower cost, better reliability and reduced maintenance compared to traditional RF-source technology. No circulators are required, which makes the RF-module very compact and reliable. The SiC power transistor has a very low input capacitance and was optimized for low gate resistance to enable fast switching in the VHF range. It delivers a maximum pulsed drain saturation current of 65 A. The transistor provides at 350 V supply voltage and 150 MHz an output power of 5,6 kW at a gain of 15,8 dB. It is essential to avoid high parasitic source inductances at RF and good thermal conductivity is required for operation at high duty cycle. We have built very compact 75 x 90 mm ceramic amplifier modules using a planar interconnect technology (SIPLIT) to connect the bare die transistors to the DCB substrate. The modules have a fully symmetric push-pull topology (circlotron) with four transistors in parallel in each leg. The RF-modules delivered at 150 MHz an impressive RF output power in the range of 40 kW. Further tests at 324 MHz are planned and will be presented.