IPAC'10 - List of Authors (De Salvador, D.)

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De Salvador, D.

Paper	Title	Page
THPEC080	Fabrication of Silicon Strip Crystals for UA9 Experiment	4243
	A. Mazzolari, E. Bagli, V. Guidi INFN-Ferrara, Ferrara S. Baricordi, P. Dalpiaz, D. Vincenzi UNIFE, Ferrara A. Carnera, D. De Salvador Univ. degli Studi di Padova, Padova G. Della Mea INFN/LNL, Legnaro (PD) A.M. Taratin JINR, Dubna, Moscow Region
	Channeling in bent crystals is a technique with high potential to steer charged-particle beams for several applications in accelerators physics. Revisited methods of silicon micromachining techniques allowed one to realize a new generation of crystals. Characterizations using x-ray diffraction, atomic force microscopy, high resolution transmission electron microscopy and ion beam analysis techniques, showed high quality of the crystals. A specifically designed holder allowed to mechanically bend a crystal at given curvature and remove unwanted torsion. Characterization of such crystals with 400 GeV at CERN H8 external line highlighted 85% single-pass efficiency. A selected crystal has been installed inside the SPS ring in the environment of the CERN experiment UA9 and successfully employed for collimation of the circulating beam. On behalf of UA9 collaboration

Paper

Title

Page

THPEC080

Fabrication of Silicon Strip Crystals for UA9 Experiment

4243

A. Mazzolari, E. Bagli, V. Guidi
INFN-Ferrara, Ferrara
S. Baricordi, P. Dalpiaz, D. Vincenzi
UNIFE, Ferrara
A. Carnera, D. De Salvador
Univ. degli Studi di Padova, Padova
G. Della Mea
INFN/LNL, Legnaro (PD)
A.M. Taratin
JINR, Dubna, Moscow Region

Channeling in bent crystals is a technique with high potential to steer charged-particle beams for several applications in accelerators physics. Revisited methods of silicon micromachining techniques allowed one to realize a new generation of crystals. Characterizations using x-ray diffraction, atomic force microscopy, high resolution transmission electron microscopy and ion beam analysis techniques, showed high quality of the crystals. A specifically designed holder allowed to mechanically bend a crystal at given curvature and remove unwanted torsion. Characterization of such crystals with 400 GeV at CERN H8 external line highlighted 85% single-pass efficiency. A selected crystal has been installed inside the SPS ring in the environment of the CERN experiment UA9 and successfully employed for collimation of the circulating beam.

On behalf of UA9 collaboration