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Carnera, A.

Paper Title Page
THPEC080 Fabrication of Silicon Strip Crystals for UA9 Experiment 4243
 
  • A. Mazzolari, E. Bagli, V. Guidi
    INFN-Ferrara, Ferrara
  • S. Baricordi, P. Dalpiaz, D. Vincenzi
    UNIFE, Ferrara
  • A. Carnera, D. De Salvador
    Univ. degli Studi di Padova, Padova
  • G. Della Mea
    INFN/LNL, Legnaro (PD)
  • A.M. Taratin
    JINR, Dubna, Moscow Region
 
 

Channeling in bent crystals is a technique with high potential to steer charged-particle beams for several applications in accelerators physics. Revisited methods of silicon micromachining techniques allowed one to realize a new generation of crystals. Characterizations using x-ray diffraction, atomic force microscopy, high resolution transmission electron microscopy and ion beam analysis techniques, showed high quality of the crystals. A specifically designed holder allowed to mechanically bend a crystal at given curvature and remove unwanted torsion. Characterization of such crystals with 400 GeV at CERN H8 external line highlighted 85% single-pass efficiency. A selected crystal has been installed inside the SPS ring in the environment of the CERN experiment UA9 and successfully employed for collimation of the circulating beam.


On behalf of UA9 collaboration