• G. Busatto, C. Abbate, F. Iannuzzo, C.E. Pagliarone
  University of Cassino, Cassino
• F. Bedeschi, G.M. Piacentino
  INFN-Pisa, Pisa

The pos­si­ble is­sues re­lat­ed to the use of last-gen­er­a­tions In­su­lat­ed Gate Bipo­lar Tran­sis­tors (IGBTs) switch­es into a Marx-topol­o­gy klystron mod­u­la­tor are dis­cussed. Ex­per­i­men­tal re­sults ob­tained from two cells Marx pro­to­types using two dif­fer­ent so­lu­tions, in­clud­ing sin­gle de­vice and se­ries con­nect­ed de­vices both hard-switched, are pre­sent­ed. The use of sin­gle high volt­age de­vice per cell al­lowed us to ob­tain lower on-state volt­age drop but much slow­er switch­ing times. On the other side the se­ries con­nec­tion of lower volt­age IGBTs re­sults in much faster com­mu­ta­tions and lower de­vices costs ac­com­pa­nied by a larg­er on state volt­age drop.