SINAP, Shanghai
The SDUV-FEL is a HGHG based FEL test facility under development at the SINAP campus. It was designed as a single stage HGHG-FEL driven by a 300MeV linac in the beginning, but now it is being integrated towards a two stages of cascading HGHG driven by a 160MeV linac. In this paper, we present the design progress and report the R&D status of the photo cathode RF gun, the magnetic bunch compressor and the undulators for this test facility.
IHEP Beijing, Beijing
SINAP, Shanghai
Transverse RF deflectors are widely used for the measurements of ultra-short bunch length and other slice parameters. This paper presents the development of an S-band LOLA-type RF deflector and the bunch length measurement of the electron beam produced by the photocathode RF gun of Shanghai DUV-FEL facility. The deflector’s VSWR is 1.06, the whole attenuation 0.5dB, and the bandwidth 4.77MHz for VSWR less than 1.1. With laser pulse width of 8.5ps, beam energy of 4.2 MeV, bunch charge of 0.64 nC, the bunch lengths for different RF input power into the deflector were measured, and the averaged rms bunch length of 5.25 ps was obtained.