ECRIS2012 - List of Authors (Haba, H.)

Paper

Title

Page

Recent RIKEN 28 GHz SC-ECRIS Results

159

Y. Higurashi, M. Fujimaki, H. Haba, O. Kamigaito, M. Kidera, M. Komiyama, J. Ohnishi, K. Ozeki
RIKEN Nishina Center, Wako, Japan
T. Aihara, M. Tamura, A. Uchiyama
SHI Accelerator Service Ltd., Tokyo, Japan

For increasing the beam intensity of highly charged heavy ions at RIKEN RIBF, we constructed new SC-ECR ion source. In the spring of 2011, we injected 28GHz microwave into the ion source and obtained first beam. Since then, we made several test experiments for increasing the beam intensity of highly charged Xe and U ion beam, and produced ~60 eμA of U³⁵⁺, ~90 eμA of U³³⁺ at the injected RF power of ~2 kW using sputtering method. In case of Xe²⁵⁺, 250 euA was obtained at RF power of 1.7 kW. Using sputtering method, we produced U³⁵⁺ ion beam longer than one month for the RIBF experiment without break. In the beginning of 2012, we installed additional GM-JT refrigerator to increase the cooling power at 4.2 K, then the total cooling power became higher than 9 W. Using it, we can use higher than 8 W of cooling power for heat load due to the absorbed X-rays. In this summer, we will install the new plasma chamber made of Al for increasing the cooling power. We will also use high temperature oven to increase the U vapor. In this contribution, we report the recent modification of the ion source and test experiments for production of U and Xe ion beam.

Slides THXO03 [49.487 MB]

Paper	Title	Page
THXO03	Recent RIKEN 28 GHz SC-ECRIS Results	159
	Y. Higurashi, M. Fujimaki, H. Haba, O. Kamigaito, M. Kidera, M. Komiyama, J. Ohnishi, K. Ozeki RIKEN Nishina Center, Wako, Japan T. Aihara, M. Tamura, A. Uchiyama SHI Accelerator Service Ltd., Tokyo, Japan
	For increasing the beam intensity of highly charged heavy ions at RIKEN RIBF, we constructed new SC-ECR ion source. In the spring of 2011, we injected 28GHz microwave into the ion source and obtained first beam. Since then, we made several test experiments for increasing the beam intensity of highly charged Xe and U ion beam, and produced ~60 eμA of U³⁵⁺, ~90 eμA of U³³⁺ at the injected RF power of ~2 kW using sputtering method. In case of Xe²⁵⁺, 250 euA was obtained at RF power of 1.7 kW. Using sputtering method, we produced U³⁵⁺ ion beam longer than one month for the RIBF experiment without break. In the beginning of 2012, we installed additional GM-JT refrigerator to increase the cooling power at 4.2 K, then the total cooling power became higher than 9 W. Using it, we can use higher than 8 W of cooling power for heat load due to the absorbed X-rays. In this summer, we will install the new plasma chamber made of Al for increasing the cooling power. We will also use high temperature oven to increase the U vapor. In this contribution, we report the recent modification of the ion source and test experiments for production of U and Xe ion beam.
	Slides THXO03 [49.487 MB]