Author: Kase, M.
Paper Title Page
TUCOAK04 Production of Highly Charged U Ion Beam from RIKEN SC-ECRIS 84
 
  • Y. Higurashi, M. Fujimaki, A. Goto, H. Haba, E. Ikezawa, O. Kamigaito, M. Kase, M. Komiyama, T. Nakagawa, J. Ohnishi, Y. Watanabe
    RIKEN Nishina Center, Wako, Japan
  • T. Aihara, M. Tamura, A. Uchiyama
    SHI Accelerator Service Ltd., Tokyo, Japan
 
  In 2008, we suc­cess­ful­ly pro­duced 345 MeV/u U beam (~0.4 pnA on tar­get) for RIKEN RIBF pro­ject. How­ev­er, to meet the re­quire­ment of the RIBF (pri­ma­ry beam in­ten­si­ty of 1pμA on tar­get), we still need to in­crease the beam in­ten­si­ty. To in­crease the beam in­ten­si­ty of U ion, we start­ed to make a test ex­per­i­ments for pro­duc­tion of U ion beam from the new SC-ECRIS. In this ex­per­i­ment, we pro­duced 2~1.5 pμA of medi­um charge state U ion (ex., 55 eμA of U31+, 57 eμA of U27+) at the RF power of 1.2 kW with sput­ter­ing method. For test­ing the ef­fect of the ion­ized gas on the U ion beam, we chose Ar, Ar + O2 and O2 gas for pro­duc­ing U ion beam. In this ex­per­i­ment, we ob­served that the beam in­ten­si­ty of lower charge state of U ion beam (<33+) was in­creased and the emit­tance of the U ion beam was de­creased from ~0.1 π.mm mrad (1rms) to 0.05 π.mm mrad with adding Ar gas to O2 gas. Using this method, we sup­plied U35+ beam for ~1 month with­out break for the RIBF ex­per­i­ment. In this con­tri­bu­tion, we pre­sent the ex­per­i­men­tal re­sults for pro­duc­tion of U ion beam from SC-ECRIS in de­tail and fu­ture plan to in­crease the U ion beam in­ten­si­ty.  
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