ECRIS2010 - List of Authors (Ikezawa, E.)

Paper

Title

Page

Production of Highly Charged U Ion Beam from RIKEN SC-ECRIS

84

Y. Higurashi, M. Fujimaki, A. Goto, H. Haba, E. Ikezawa, O. Kamigaito, M. Kase, M. Komiyama, T. Nakagawa, J. Ohnishi, Y. Watanabe
RIKEN Nishina Center, Wako, Japan
T. Aihara, M. Tamura, A. Uchiyama
SHI Accelerator Service Ltd., Tokyo, Japan

In 2008, we successfully produced 345 MeV/u U beam (~0.4 pnA on target) for RIKEN RIBF project. However, to meet the requirement of the RIBF (primary beam intensity of 1pμA on target), we still need to increase the beam intensity. To increase the beam intensity of U ion, we started to make a test experiments for production of U ion beam from the new SC-ECRIS. In this experiment, we produced 2~1.5 pμA of medium charge state U ion (ex., 55 eμA of U³¹⁺, 57 eμA of U²⁷⁺) at the RF power of 1.2 kW with sputtering method. For testing the effect of the ionized gas on the U ion beam, we chose Ar, Ar + O₂ and O₂ gas for producing U ion beam. In this experiment, we observed that the beam intensity of lower charge state of U ion beam (<33+) was increased and the emittance of the U ion beam was decreased from ~0.1 π.mm mrad (1rms) to 0.05 π.mm mrad with adding Ar gas to O₂ gas. Using this method, we supplied U³⁵⁺ beam for ~1 month without break for the RIBF experiment. In this contribution, we present the experimental results for production of U ion beam from SC-ECRIS in detail and future plan to increase the U ion beam intensity.

Slides TUCOAK04 [1.709 MB]

Paper	Title	Page
TUCOAK04	Production of Highly Charged U Ion Beam from RIKEN SC-ECRIS	84
	Y. Higurashi, M. Fujimaki, A. Goto, H. Haba, E. Ikezawa, O. Kamigaito, M. Kase, M. Komiyama, T. Nakagawa, J. Ohnishi, Y. Watanabe RIKEN Nishina Center, Wako, Japan T. Aihara, M. Tamura, A. Uchiyama SHI Accelerator Service Ltd., Tokyo, Japan
	In 2008, we successfully produced 345 MeV/u U beam (~0.4 pnA on target) for RIKEN RIBF project. However, to meet the requirement of the RIBF (primary beam intensity of 1pμA on target), we still need to increase the beam intensity. To increase the beam intensity of U ion, we started to make a test experiments for production of U ion beam from the new SC-ECRIS. In this experiment, we produced 2~1.5 pμA of medium charge state U ion (ex., 55 eμA of U³¹⁺, 57 eμA of U²⁷⁺) at the RF power of 1.2 kW with sputtering method. For testing the effect of the ionized gas on the U ion beam, we chose Ar, Ar + O₂ and O₂ gas for producing U ion beam. In this experiment, we observed that the beam intensity of lower charge state of U ion beam (<33+) was increased and the emittance of the U ion beam was decreased from ~0.1 π.mm mrad (1rms) to 0.05 π.mm mrad with adding Ar gas to O₂ gas. Using this method, we supplied U³⁵⁺ beam for ~1 month without break for the RIBF experiment. In this contribution, we present the experimental results for production of U ion beam from SC-ECRIS in detail and future plan to increase the U ion beam intensity.
	Slides TUCOAK04 [1.709 MB]