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Abbate, C.

Paper Title Page
WEPD079 Comparison among Eligible Topologies for Marx Klystron Modulators 3284
 
  • G. Busatto, C. Abbate, F. Iannuzzo, C.E. Pagliarone
    University of Cassino, Cassino
  • F. Bedeschi, G.M. Piacentino
    INFN-Pisa, Pisa
 
 

The possible issues related to the use of last-generations Insulated Gate Bipolar Transistors (IGBTs) switches into a Marx-topology klystron modulator are discussed. Experimental results obtained from two cells Marx prototypes using two different solutions, including single device and series connected devices both hard-switched, are presented. The use of single high voltage device per cell allowed us to obtain lower on-state voltage drop but much slower switching times. On the other side the series connection of lower voltage IGBTs results in much faster commutations and lower devices costs accompanied by a larger on state voltage drop.